IRF7379 |
RFQ for IRF7379 Required Field |
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| Technical/Catalog Information | IRF7379IPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N and P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 5.8A, 4.3A |
| Rds On (Max) @ Id, Vgs | 45 mOhm @ 5.8A, 10V |
| Input Capacitance (Ciss) @ Vds | 440pF @ 25V |
| Power - Max | 2.5W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 25nC @ 10V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF7379IPBF IRF7379IPBF |
| Product | Manufacturers | Pack | D/C | ||||||||||||||||||||||
| IRF7379 | - | - | 2004 |
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.
Features |
| *Generation V Technology* Ultra Low On-Resistance* Complimentary Half Bridge* Surface Mount* Fully Avalanche Rated |
| Parameter | Max. | Units | ||
| N-Channel | P-Channel | |||
| VSD | Drain-to-Source Voltage | 30 | -30 | A |
| ID @ TA = 25 | Continuous Drain Current, V GS @ 10V | 5.8 | -4.3 | |
| ID @ TA = 70 | Continuous Drain Current, V GS @ 10V | 4.6 | -3.4 | |
| IDM | Pulsed Drain Current | 46 | -34 | |
| PD @TA = 25 | Power Dissipation | 2.5 | W | |
| Linear Derating Factor | 0.02 | W/ | ||
| VGS | Gate-to-Source Voltage | ± 20 | V | |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | -5.0 | V/ns |
| TJ, TSTG | Junction and Storage Temperature Range | -55 to + 150 | ||
